Micron Technology’s latest DRAM prototype highlights a sharp divergence from Samsung Electronics and SK Hynix in chip manufacturing, a difference that could shape future industry competition.
Micron has opted to minimize the use of extreme ultraviolet (EUV) lithography, instead relying on mature argon fluoride immersion (ArFi) lithography to accelerate production. In contrast, Samsung and SK Hynix plan to expand their use of EUV layers, a move that could impact long-term yields, production efficiency, and chip performance, industry experts say.
According to industry sources, Micron incorporated EUV into only a limited number of steps in its 10-nanometer class, sixth-generation (D1c) DRAM, introduced in February. A Micron spokesperson said, “EUV technology still lacks full stability, so we have applied it only where absolutely necessary. We believe this was the right timing after evaluating cost and productivity.”
Samsung, the first in the industry to adopt EUV for memory chip production, has steadily expanded its use since 2020. It initially applied EUV to a single layer of its third-generation 10-nanometer (1z) DRAM and has since increased the number of EUV layers. Its upcoming D1c DRAM will feature more than five EUV layers.
SK Hynix has taken a more cautious approach. The company introduced EUV in DRAM manufacturing in 2021, beginning with its fourth-generation 10-nanometer (D1a) DRAM, where only one EUV layer was used. SK Hynix now plans to apply five or more EUV layers to its next-generation D1c DRAM, aligning with Samsung’s strategy.
Micron has historically avoided EUV in DRAM production and continues to take a conservative approach. Its recently shipped D1c DRAM prototype uses only one EUV layer, relying heavily on ArFi-based multi-patterning. However, industry analysts warn that as chip designs become more advanced, relying solely on ArFi lithography could lead to reduced yield rates and higher production costs, potentially putting Micron at a disadvantage in securing high-performance DRAM orders.
“Replacing a single EUV layer with ArFi-based multi-patterning is manageable for now, but as the number of EUV layers increases beyond three, the complexity gap will widen,” an industry expert said. “In large-scale production, Samsung and SK Hynix—having years of experience stabilizing EUV processes—are likely to gain an edge in yield and output.”
Samsung, which owns more than 30 EUV machines—the most among the three memory makers—is making adjustments to its EUV process after setbacks in its fourth- and fifth-generation 10-nanometer DRAM. The company has focused on refining resist materials, improving light sources, and enhancing mask technology, with internal evaluations showing progress in throughput and process efficiency.
